1.8VoltIntelStrataFlash
®
Wireless
Memorywith3.0-VoltI/O(L30)
28F640L30,28F128L30,28F256L30
Datasheet
ProductFeatures
The1.8VoltIntelStrataFlash
®
wirelessme morywith3-VoltI/Oproductisthelatestgenerationof
IntelStrataFlash
®
memorydevicesfeaturingflexible,multiple-partition,dualoperation.Itprovideshigh
performancesynchronous-burstreadmodeandasynchronousreadmodeusing1.8voltlow-voltage,multi-
levelcell(MLC)technology.
Themultiple-partitionarchitectureenablesbackgroundprogrammingorerasingtooccurinonepartition
whilecodeexecutionordatareadstakeplaceinanotherpartition.Thisdual-operationarchitecturealso
allowstwoprocessorstointerleavecodeoperationswhileprogramanderaseoperationstakeplaceinthe
background.
The
1.8VoltIntelStrataFlash
®
wirelessmemorywith3-VoltI/OdeviceismanufacturedusingIntel
0.13µmETOX™VIIIprocesstechnology.Itisavailableinindustry-standardchipscalepackaging.
.
■ HighperformanceRead-While-Write/Erase
—85nsinitialaccess
—52MHzwithzerowaitstate,17nsclock-to-data
outputsynchronous-burstmode
— 25nsasynchronous-pagemode
—4-,8-,16-,andcontinuous-wordburstmode
—Burstsuspend
— ProgrammableWAITconfiguration
—BufferedEnhancedFactoryProgramming
(BufferedEFP):3.5µs/byte(Typ)
—1.8Vlow-powerbufferedandnon-buffered
programming@10µs/byte(Typ)
■ Architecture
— Asymmetrica lly-blockedarchitecture
— Multiple8-Mbitpartitions:64Mband128Mb
devices
— Multiple16-Mbitpartitions:256Mbdevices
—Four16-KWordparameterblocks:topor
bottomconfigurations
— 64K-Wordmainblocks
— Dual-operation:Read-While-Write(RWW)or
Read-While-Erase(RWE)
— Statusregisterforpartitionanddevicestatus
■ Power
—1.7V-2.0VV
CC
operation
—I/Ovoltage:2.2V-3.3V
— Standbycurrent:30µA(Typ)
—4-Wordsynchronousreadcurrent:17mA(Typ)
@54MHz
— AutomaticPowerSavings(APS)mode
■ Software
—20µs(Typ)programsuspend
—20µs(Typ)erasesuspend
—Intel®FlashDataIntegrator(FDI)optimized
—BasicCommandSet(BCS)andExtended
CommandSet(ECS)compatible
— CommonFlashInterface(CFI)capable
■ Security
—OTPspace:
— 64uniquedeviceidentifierbits
— 64user-programmableOTPbits
— Additional2048user-programmableOTP
bits
— Absolutewriteprotection:V
PP
=GND
— Power-transitionerase/programlockout
— Individualzero-latencyblocklocking
— Individualblocklock-down
■ QualityandReliability
— Expandedtemperature:–25°Cto+85°C
— Minimum100,000erasecyclesperblock
—ETOX™VIIIprocesstechnology(0.13µm)
■ DensityandPackaging
—64-,128-and256-MbitdensityinVFBGA
packages
— 128/0,and256/0DensityinStacked-CSP
— 16-bitwidedatabus
OrderNumber:251903-003
April2003
Notice:Thisdocumentcontainsinformationonproductsinthedesignphaseof
development.Theinformationhereissubjecttochangewithoutnotice.Donotfinalize
adesignwiththisinformation.