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28F256L30

型号：	28F256L30
PDF文件：
功能描述：	1.8 Volt Intel StrataFlashÂ® Wireless Memory with 3.0-Volt I/O (L30)
PDF文件大小：	1404.25 Kbytes
PDF页数：	共100页
制造商：	INTEL[Intel Corporation]
制造商LOGO：
制造商网址：	http://www.intel.com

28F256L30

PDF页面索引

120%

1.8VoltIntelStrataFlash

Wireless

Memorywith3.0-VoltI/O(L30)

28F640L30,28F128L30,28F256L30

Datasheet

ProductFeatures

The1.8VoltIntelStrataFlash

wirelessme morywith3-VoltI/Oproductisthelatestgenerationof

IntelStrataFlash

®

memorydevicesfeaturingflexible,multiple-partition,dualoperation.Itprovideshigh

performancesynchronous-burstreadmodeandasynchronousreadmodeusing1.8voltlow-voltage,multi-

levelcell(MLC)technology.

Themultiple-partitionarchitectureenablesbackgroundprogrammingorerasingtooccurinonepartition

whilecodeexecutionordatareadstakeplaceinanotherpartition.Thisdual-operationarchitecturealso

allowstwoprocessorstointerleavecodeoperationswhileprogramanderaseoperationstakeplaceinthe

background.

The

1.8VoltIntelStrataFlash

wirelessmemorywith3-VoltI/OdeviceismanufacturedusingIntel

0.13µmETOX™VIIIprocesstechnology.Itisavailableinindustry-standardchipscalepackaging.

■ HighperformanceRead-While-Write/Erase

—85nsinitialaccess

—52MHzwithzerowaitstate,17nsclock-to-data

outputsynchronous-burstmode

— 25nsasynchronous-pagemode

—4-,8-,16-,andcontinuous-wordburstmode

—Burstsuspend

— ProgrammableWAITconfiguration

—BufferedEnhancedFactoryProgramming

(BufferedEFP):3.5µs/byte(Typ)

—1.8Vlow-powerbufferedandnon-buffered

programming@10µs/byte(Typ)

■ Architecture

— Asymmetrica lly-blockedarchitecture

— Multiple8-Mbitpartitions:64Mband128Mb

devices

— Multiple16-Mbitpartitions:256Mbdevices

—Four16-KWordparameterblocks:topor

bottomconfigurations

— 64K-Wordmainblocks

— Dual-operation:Read-While-Write(RWW)or

Read-While-Erase(RWE)

— Statusregisterforpartitionanddevicestatus

■ Power

—1.7V-2.0VV

operation

—I/Ovoltage:2.2V-3.3V

— Standbycurrent:30µA(Typ)

—4-Wordsynchronousreadcurrent:17mA(Typ)

@54MHz

— AutomaticPowerSavings(APS)mode

■ Software

—20µs(Typ)programsuspend

—20µs(Typ)erasesuspend

—Intel®FlashDataIntegrator(FDI)optimized

—BasicCommandSet(BCS)andExtended

CommandSet(ECS)compatible

— CommonFlashInterface(CFI)capable

■ Security

—OTPspace:

— 64uniquedeviceidentifierbits

— 64user-programmableOTPbits

— Additional2048user-programmableOTP

bits

— Absolutewriteprotection:V

=GND

— Power-transitionerase/programlockout

— Individualzero-latencyblocklocking

— Individualblocklock-down

■ QualityandReliability

— Expandedtemperature:–25°Cto+85°C

— Minimum100,000erasecyclesperblock

—ETOX™VIIIprocesstechnology(0.13µm)

■ DensityandPackaging

—64-,128-and256-MbitdensityinVFBGA

packages

— 128/0,and256/0DensityinStacked-CSP

— 16-bitwidedatabus

OrderNumber:251903-003

April2003

Notice:Thisdocumentcontainsinformationonproductsinthedesignphaseof

development.Theinformationhereissubjecttochangewithoutnotice.Donotfinalize

adesignwiththisinformation.

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28F256L30