E
Order Number: 290245-009
Flash Electrical Chip-Erase
2 Second Typical Chip-Erase
Quick-Pulse Programming Algorithm
10 µS Typical Byte-Program
4 second Chip-Program
100,000 Erase/Program Cycles
12.0 V ±5% V
PP
High-Performance Read
90 ns Maximum Access Time
CMOS Low Power Consumption
10 mA Typical Active Current
50 µA Typical Standby Current
0 Watts Data Retention Power
Integrated Program/Erase Stop Timer
Command Register Architecture for
Microprocessor/Microcontroller
Compatible Write Interface
Noise Immunity Features
±10% V
CC
Tolerance
Maximum Latch-Up Immunity
through EPI Processing
ETOX™ Nonvolatile Flash Technology
EPROM-Compatible Process Base
High-Volume Manufacturing
Experience
JEDEC-Standard Pinouts
32-Pin Plastic Dip
32-Lead PLCC
32-Lead TSOP
(See Packaging Spec., Order #231369)
Extended Temperature Options
Intel’s 28F020 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F020 adds electrical c hip-erasure and reprogramming to familiar
EPROM technol ogy. Memory content s can be rewritten: in a tes t s ock et; in a P ROM-programmer s ock et; on-
board during subass embly test; in-system during final test; and in-system after sale. The 28F020 increases
memory flexibility, while contributing to time and cost savings.
The 28F020 is a 2048-ki lobit nonvolat ile memory organiz ed as 262,144 bytes of eight bits. Intel’s 28F020 is
offered in 32-pin plastic DIP, 32-lead PLCC, and 32-lead TSOP packages. Pin assignments conform to
JEDEC standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel’s ETOX™ (EPROM Tunnel Oxide)
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V V
PP
supply, the
28F020 performs 100,000 erase and program cycles—well within the time limits of the quick-pulse
programming and quick-erase algorithms.
Intel’s 28F020 employs advanced CMOS circuitry for systems requiring high-performance access speeds,
low power consumption, and immunit y to noise. I ts 90 ns acces s time provides zero wait-stat e performance
for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 µA translates
into power savings when the device is deselected. Finally, the highest degree of latch-up protection is
achieved t hrough Int el’s unique E PI proc es sing. Prev ention of lat ch-up i s prov ided for s tres ses up to 100 mA
on address and data pins, from –1 V to V
CC
+ 1 V.
With Intel’s ETOX process technology base, the 28F020 builds on years of EPROM experience to yield the
highest levels of quality, reliability, and cost-effectiveness.
28F020 2048K (256K X 8) CMOS
FLASH MEMORY
