E
December 1996 Order Number: 290533-004
85 ns Access Time (t
RAC
)
Supports both Standard and Fast-
Page-Mode Accesses
Multiplexed Address Bus
RAS# and CAS# Control Inputs
No-Glue Interface to Many Memory
Controllers
SmartVoltage Technology
User-Selectable 3.3V or 5V V
CC
User-Selectable 5V or 12V V
PP
0.33 MB/sec Write Transfer Rate
x16 Architecture
56-Lead TSOP Type I Package
Backwards-Compatible with 28F008SA
Command Set
2 µA Typical Deep Power-Down Current
1 mA Typical I
CC
Active Current in Static
Mode
32 Separately-Erasable/Lockable
64-Kbyte Blocks
1 Million Erase Cycles per Block
State-of-the-Art 0.6 µm ETOX™ IV Flash
Technology
Intel’ s 28F016XD 16-Mbit flas h memory is a revoluti onary archit ecture whi ch is t he ideal c hoice for des igning
truly revolut ionary high-performance produc ts. Combini ng its DRAM-l ike read performance and i nterface with
the intrinsic nonvolatility of flash memory, the 28F016XD eliminates the traditional redundant memory
paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory, such as
DRAM, for improved system performance. The innovative capabilities of the 28F016XD enable t he design of
direct-execute code and mass storage data/file flash memory systems.
The 28F016XD’s DRAM-like interface with a multiplexed address bus, flexible V
CC
and V
PP
voltages, power
saving features, extended cycling, fast program and read performance, symmetrically-blocked architecture,
and selectiv e bloc k l ock ing provi de a highly fl exibl e memory com ponent s uitabl e for res ident f las h com ponent
arrays on the system board or SIMMs. The DRAM-like interface with RAS# and CAS# control inputs allows
for easy migration to flash memory in existing DRAM-based systems. The 28F016XD’s dual read voltage
allows the same component to operate at either 3.3V or 5.0V V
CC
. Programming voltage at 5.0V V
PP
minimizes external circuitry in minimal-chip, space critical designs, while the 12.0V V
PP
option maximizes
program/erase performance. The x16 architecture allows optimization of the memory-to-processor interface.
Its high read performance combined with flexible block locking enable both storage and execution of
operating systems/application s oftware and fas t acc ess t o large data tables . The 28F016XD i s m anufactured
on Intel’s 0.6 µm ETOX IV process technology.
28F016XD
16-MBIT (1 MBIT x 16)
DRAM-INTERFACE FLASH MEMORY
