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28F008B3

28F008B3首页预览图
型号: 28F008B3
PDF文件:
  • 28F008B3 PDF文件
  • 28F008B3 PDF在线浏览
功能描述: SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE
PDF文件大小: 408.27 Kbytes
PDF页数: 共49页
制造商: INTEL[Intel Corporation]
制造商LOGO: INTEL[Intel Corporation] LOGO
制造商网址: http://www.intel.com
捡单宝28F008B3
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品牌
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  • 集好芯城

    16

    0755-8328588218188616606陈妍深圳市福田区深南中路3023号汉国中心55楼11010804

  • 28F008B3
  • MT 
  • TSSOP 
  • 最新批? 
  • 5704 
  • 原厂原装现货现卖 

  • 深圳创芯佳业科技有限公司

    8

    0755-8326777413925253466蔡先生,谢小姐深圳市福田区华强电子世界23C120室深圳创芯佳业科技有限公司主营:NXP、TI、ADI、ON、ST、Maxim、microchip等进口原装正品集成IC!支持订货,支持含税,承接Bom表配单!实单必成,欢迎电话/微信/QQ咨询:蔡先生/谢小姐11016192

  • 28F008B3-10
  • INTEL 
  • TSOP 
  •  
  • 4 
  • 只做原装正品,支持含税 

  • 深圳市安富世纪电子有限公司

    7

    0755-8257321018124040553杨丹妮0755-82573210深圳市福田区中航路都会轩240611012658

  • 28F008B3
  • MT 
  • TSSOP 
  • 19+ 
  • 2000 
  • 是终端可以免费供样,支持BOM配单!原装正品 

PDF页面索引
120%
E
PRELIMINARY
Ma
y
1997 Order Number: 290605-001
Flexible SmartVoltage Technology
2.7V–3.6V Program/Erase
2.7V–3.6V Read Operation
12V V
PP
Fast Production
Programming
2.7V or 1.8V I/O Option
Reduces Overall System Power
Optimized Block Sizes
Eight 8-Kbyte Blocks for Data,
Top or Bottom Locations
Up to Thirty-One 64-Kbyte Blocks
for Code
High Performance
2.7V–3.6V: 120 ns Max Access Time
Block Locking
V
CC
-Level Control through WP#
Low Power Consumption
20 mA Maximum Read Current
Absolute Hardware-Protection
V
PP
= GND Option
V
CC
Lockout Voltage
Extended Temperature Operation
–40°C to +85°C
Supports Code plus Data Storage
Optimized for FDI, Flash Data
Integrator Software
Fast Program Suspend Capability
Fast Erase Suspend Capability
Extended Cycling Capability
10,000 Block Erase Cycles
Automated Byte Program and Block
Erase
Command User Interface
Status Registers
SRAM-Compatible Write Interface
Automatic Power Savings Feature
Reset/Deep Power-Down
1 µA I
CC
Typical
Spurious Write Lockout
Standard Surface Mount Packaging
48-Ball µBGA* Package
40-Lead TSOP Package
Footprint Upgradeable
Upgradeable from 2-, 4- and 8-Mbit
Boot Block
ETOX™ V (0.4 µ) Flash Technology
x8-Only Input/Output Architecture
For Space-Constrained 8-bit
Applications
The new Smart 3 A dvanc ed Boot Bloc k, manuf act ured on Int el’s lates t 0. 4µ tec hnology , repres ents a f eature-
rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability
(2.7V read, program and erase) with high-speed, low-power operation. Several new features have been
added, including the ability to drive the I/O at 1.8V, which significantly reduces system active power and
interfac es to 1.8V cont rollers. A new bloc king schem e enables code and data s torage within a si ngle device.
Add to this the Intel-developed Flash Data Integrator (FDI) software and you have the most cost-effective,
monolithic code plus data storage solution on the market today. Smart 3 Advanced Boot Block Byte-Wide
products will be available in 40-lead TSOP and 48-ball µBGA* packages. Additional information on this
product family can be obtained by accessing Intel’s WWW page: http://www.intel.com/design/flcomp
SMART 3 ADVANCED BOOT BLOCK
BYTE-WIDE
8-MBIT (1024K x 8), 16-MBIT (2056K x 8)
FLASH MEMORY FAMILY
28F008B3, 28F016B3
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