AI00769B
14
A0-A13
P
Q0-Q7
V
PP
V
CC
M27128A
G
E
V
SS
8
Fig ure 1. L og ic Diag ra m
M27128A
NMOS 128K (16K x 8) UV EPROM
FAST ACCESS T IME: 200ns
EXTENDED TEMPERATURE RANGE
SINGLE 5 V SUPPLY VOLTAGE
LOW STANDBY CURRENT: 40mA max
TTL COMPATIBLE DURING READ and
PROGRAM
F AST PROGRAMMING ALGORITHM
ELECTRONIC SIGNATURE
PROGRAMMING VOLTAGE: 12V
DESCRIPTION
The M27128A is a 131,072 bit UV erasable and
electrically programmable memory EPROM. It is
organized as 16,384 words by 8 bits.
The M27128A is h oused in a 28 Pin Window Ce-
ramic Frit-Seal Dual-in-Line package. The trans-
parent lid allows the user to expose the chip to
ultraviolet light to erase the bit pattern. A new
patter n can then be written to the device by follow-
ing the programming procedure.
A0 - A13 Address Inputs
Q0 - Q7 Data Outputs
E Chip Enable
G Output Enable
P Program
V
PP
Program Supply
V
CC
Supply Voltage
V
SS
Ground
Table 1. Signal Names
1
28
FDIP28W (F)
March 1995 1/10