SKiiP 26NABI066V3
Absolute Maximum Ratings (T
s
=25°C, unless otherwise specified)
Symbol
Parameter
Conditions
Values Units
IGBT - Inverter, Chopper
V
CES
600 V
I
C
T
j
= 175 °C T
s
= 25 °C
59 A
T
s
= 70 °C
47 A
I
Cnom
50 A
I
CRM
I
CRM
= 2xI
Cnom
100 A
t
psc
V
CC
= 360 V V
DC
=360V, V
GE
=15V, Tj=150°C
≤6 µs
MiniSKiiP
®
CIB IPM
V
GE
≤ 15 V
V
CES
≤ 600 V
T
j(max)
-40 ... +175 °C
Diode - Inverter, Chopper
I
F
T
j
= 175 °C T
s
= 25 °C
54 A
T
s
= 70 °C
42 A
SKiiP 26NABI066V3
I
Fnom
50 A
I
FRM
I
FRM
= 2xI
Fnom
100 A
I
FSM
t
p
= 10 ms, sin 180°, T
j
= 25 °C
345 (320)
A
Data sheet status: Preliminary T
j(max)
-40 ... +175 °C
Diode - Rectifier
V
RRM
T
j
= 25°C
800 V
I
F
T
s
= 70°C, T
j
= 150°C
37 A
Features
I
FSM
T
j
= 25 °C, 10ms, half sine wave
370
A
T
j(max)
-40 ... +150 °C
Driver - Inverter, Chopper
VCC
Applied between VCC-VSS, VCCL-VSSL 17 V
VBx
Applied between VB1-U, VB2-V, VB3-W 17 V
VSx
Voltage to VSS, t
p
<500ns
-3 … 600 V
V
in
Applied between HIN1, LIN1, HIN2, LIN2, HIN3, LIN3,
LIN4, /ERRIN - VSS
VSS-0.3 … VCC+0.3 V
V
oErr
Applied between /ERROUT-VSS VSS-0.3 … VCC+0.3
V
I
max(EO)
Between /ERROUT-VSS 10
mA
V
ITRIP
Applied between ITRIP-VSS VSS-0.3 … VCC+0.3 V
f
max
20 kHz
Temperature
T
c
-40 ... +125 °C
T
stg
-40 ... +125 °C
System
V
CC
Applied between P-NU, NV, NW 400 V
V
CC(s)
Applied between P-NU, NV, NW ≥400 V
V
isol
AC, rms, f=60Hz, t=1min, all pins to heat sink 2500 V
I
tRMS
Per power terminal (20A / Spring) 20 A
Typical Applications
Electrical Characteristics (T
s
=25°C, unless otherwise specified)
Symbol
Parameter
Conditions
min. typ. max. Units
IGBT - Inverter, Chopper
V
CEsat
I
C
= 50 A T
j
= 25°C
1.45 1.85 V
V
GE
= 15 V T
j
= 150 °C
1.65 2.05 V
Remarks
V
CEO
T
j
= 25 °C
0.9 1.1 V
T
j
= 150 °C
0.8 1.0 V
r
CE
VGE = 15 V
T
j
= 25 °C
11 15
mΩ
T
j
= 150 °C
17 21
I
CES
V
GE
= 0 V T
j
= 25 °C
1 mA
V
CE
= 600 V
E
on
V
CC
=300V T
j
= 150 °C 3.0 mJ
E
off
I
C
=50A
T
j
= 150 °C 2.0 mJ
t
d(on)
R
G on
/ R
G off
= 4.7 Ω
T
j
= 150 °C 756 ns
t
r
di/dt
on
= 648 A/µs
T
j
= 150 °C 78 ns
t
d(off)
di/dt
off
= 1271 A/µs
T
j
= 150 °C 1276 ns
t
f
T
j
= 150 °C 128 ns
R
th(j-s)I
per IGBT 1.1 K/W
Diode - Inverter, Chopper
V
F
= V
EC
I
F
= 50 A T
j
= 25 °C
1.5 1.7 V
V
GE
= 0 V (Chiplevel) T
j
= 150 °C
1.5 1.7 V
V
F0
T
j
= 25 °C
1.0 1.1 V
T
j
= 150 °C
0.9 1.0 V
r
F
T
j
= 25 °C
10 12
mΩ
T
j
= 150 °C
12 14
mΩ
E
rr
I
F
=50A
T
j
= 150 °C
1.0 mJ
Qrr
di
F
/dt= -1771A/µs
T
j
= 150 °C
2320 µC
IRRM
V
CC
=300V, V
GE
= 0 V T
j
= 150 °C
57 A
R
th(j-s)D
per diode 1.6 K/W
NABI
1 / 6 09.08.2010 © by SEMIKRON
Three-phase bridge rectifier + brake
chopper + three-phase inverter
intelligent power module
• One screw assembly of driver,
module and heat sink
• Solder-free assembly of power,
control and auxiliary contacts
• Trench-Field-Stop IGBT
• Robust and soft freewheeling diodes
in CAL technology
• Latch-up free SOI driver IC
• Advanced level shifter technology
• Bootstrap power supply technology
• Matched propagation delay for all
channels
• Overcurrent shut-down via current
sensing
• Interlock logic for shoot-through
prevention
• Common shut-down signal
• Undervoltage lockout for all channels
with hysteresis band
• Integrated temperature sensor (NTC)
• RoHS compliant
• Industrial- & consumer drives
• Power supplies (SMPS & UPS)
• Industrial air conditioner