SKiiP 25NABI066V3
Absolute Maximum Ratings (T
s
=25°C, unless otherwise specified)
Symbol
Parameter
Conditions
Values Units
IGBT - Inverter, Chopper
V
CES
600 V
I
C
T
j
= 175 °C T
s
= 25 °C
42 A
T
s
= 70 °C
34 A
I
Cnom
30 A
I
CRM
I
CRM
= 2xI
Cnom
60 A
t
psc
V
CC
= 360 V V
DC
=360V, V
GE
=15V, Tj=150°C
≤6 µs
MiniSKiiP
®
CIB IPM
V
GE
≤ 15 V
V
CES
≤ 600 V
T
j(max)
-40 ... +175 °C
Diode - Inverter, Chopper
I
F
T
j
= 175 °C T
s
= 25 °C
42 A
T
s
= 70 °C
34 A
SKiiP 25NABI066V3
I
Fnom
30 A
I
FRM
I
FRM
= 2xI
Fnom
60 A
I
FSM
t
p
= 10 ms, sin 180°, T
j
= 25 °C A
Data sheet status: Preliminary T
j(max)
-40 ... +175 °C
Diode - Rectifier
V
RRM
T
j
= 25°C
800 V
I
F
T
s
= 70°C, T
j
= 150°C
46 A
Features
I
FSM
T
j
= 25 °C, 10ms, half sine wave
370
A
T
j(max)
-40 ... +150 °C
Driver - Inverter, Chopper
VCC
Applied between VCC-VSS, VCCL-VSSL 17 V
VBx
Applied between VB1-U, VB2-V, VB3-W 17 V
VSx
Voltage to VSS, t
p
<500ns
-3 … 600 V
V
in
Applied between HIN1, LIN1, HIN2, LIN2, HIN3, LIN3,
LIN4, /ERRIN - VSS
VSS-0.3 … VCC+0.3 V
V
oErr
Applied between /ERROUT-VSS VSS-0.3 … VCC+0.3
V
I
max(EO)
Between /ERROUT-VSS 10
mA
V
ITRIP
Applied between ITRIP-VSS VSS-0.3 … VCC+0.3 V
f
max
20 kHz
Temperature
T
c
-40 ... +125 °C
T
stg
-40 ... +125 °C
System
V
CC
Applied between P-NU, NV, NW 400 V
V
CC(s)
Applied between P-NU, NV, NW ≥400 V
V
isol
AC, rms, f=60Hz, t=1min, all pins to heat sink 2500 V
P
tot
Per IGBT @ T
s
=25°C
140 W
I
tRMS
Per power terminal (20A / Spring) 20 A
Electrical Characteristics (T
s
=25°C, unless otherwise specified)
Symbol
Parameter
Conditions
min. typ. max. Units
IGBT - Inverter, Chopper
V
CEsat
I
C
= 30 A T
j
= 25°C
1.45 1.85 V
Remarks
V
GE
= 15 V T
j
= 150 °C
1.65 2.05 V
V
CEO
T
j
= 25 °C
0.9 1.0 V
T
j
= 150 °C
0.85 0.9 V
r
CE
VGE = 15 V
T
j
= 25 °C
18 28
mΩ
T
j
= 150 °C
27 38
mΩ
I
CES
V
GE
= 0 V T
j
= 25 °C
1 mA
V
CE
= 600 V
E
on
V
DC
=300VT
j
= 150 °C T
j
= 150 °C 1.3 mJ
E
off
I
C
=30A
T
j
= 150 °C 1.0 mJ
t
d(on)
R
G on
/ R
G off
= 4.7 Ω
T
j
= 150 °C 990 ns
t
r
di/dt
on
= 815 A/µs
T
j
= 150 °C 65 ns
t
d(off)
di/dt
off
= 997 A/µs
T
j
= 150 °C 1645 ns
t
f
T
j
= 150 °C 170 ns
R
th(j-s)I
per IGBT 1.4 K/W
Diode - Inverter, Chopper
V
F
= V
EC
I
F
= 30 A T
j
= 25 °C
1.5 1.7 V
V
GE
= 0 V (Chiplevel) T
j
= 150 °C
1.5 1.7 V
V
F0
T
j
= 25 °C
1.0 V
T
j
= 150 °C
0.9 V
r
F
T
j
= 25 °C
17
mΩ
T
j
= 150 °C
20
mΩ
E
rr
I
F
= 30A
T
j
= 150 °C
0.6 mJ
Qrr
di
F
/dt = - 1730 A/µs
T
j
= 150 °C
µC
IRRM
V
CC
= 300V, V
GE
= 0 V T
j
= 150 °C
38 A
R
th(j-s)D
per diode 1.8 K/W
NABI
1 / 6 09.08.2010 © by SEMIKRON
Three-phase bridge rectifier + brake
chopper + three-phase inverter
intelligent power module
• One screw assembly of driver,
module and heat sink
• Solder-free assembly of power,
control and auxiliary contacts
• Trench-Field-Stop IGBT
• Robust and soft freewheeling diodes
in CAL technology
• Latch-up free SOI driver IC
• Advanced level shifter technology
• Bootstrap power supply technology
• Matched propagation delay for all
channels
• Overcurrent shut-down via current
sensing
• Interlock logic for shoot-through
prevention
• Common shut-down signal
• Undervoltage lockout for all channels
with hysteresis band
• Integrated temperature sensor (NTC)
• RoHS compliant
• Industrial- & consumer drives
• Power supplies (SMPS & UPS)
• Industrial air conditioner