SPW24N60C3
CoolMOS
TM
Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv /dt rated
• Ultra low effective capacitances
• Improved transconductance
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C
A
T
C
=100 °C
Pulsed drain current
1)
I
D,pulse
T
C
=25 °C
Avalanche energy, single pulse
E
AS
I
D
=12.1 A, V
DD
=50 V
780 mJ
Avalanche energy, repetitive t
AR
1),2)
E
AR
I
D
=24.3 A, V
DD
=50 V
Avalanche current, repetitive t
AR
1)
I
AR
A
Drain source voltage slope dv /dt
I
D
=24.3 A,
V
DS
=480 V, T
j
=125 °C
V/ns
Gate source voltage
V
GS
static V
V
GS
AC (f >1 Hz)
Power dissipation
P
tot
T
C
=25 °C
W
Operating and storage temperature
T
j
, T
stg
°C
1.5
24.3
50
Value
24.3
15.4
72.9
±20
±30
240
-55 ... 150
V
DS
@ T
j,max
650 V
R
DS(on),max
0.16
Ω
I
D
24.3 A
Product Summary
Type Package Ordering Code Marking
SPW24N60C3 P-TO247 Q67040-S4640 24N60C3
P-TO247
Rev. 1.0 page 1 2004-04-27
