Preliminary data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
April 2010 Doc ID 17439 Rev 1 1/11
11
STL23NM60ND
N-channel 600 V, 0.150 Ω, 19.5 A, FDmesh™ II Power MOSFET
(with fast diode) PowerFLAT™ (8x8) HV
Features
■ The worldwide best R
DS(on)
* area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout
and associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Figure 1. Internal schematic diagram
Type
V
DSS
(@T
jmax
)
R
DS(on)
max I
D
STL23NM60ND 650 V < 0.180 Ω 19.5 A
(1)
1. This value is rated according to R
thj-case.
3
3
3
'
$
0OWER&,!4X(6
"OTTOMVIEW
!-V
$
'
3
Table 1. Device summary
Order code Marking Package Packaging
STL23NM60ND 23NM60ND PowerFLAT™ 8x8 HV Tape and reel
www.st.com
