1SS392
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS392
High Speed Switching Application
z Low forward voltage : V
F (3)
= 0.54V (typ.)
z Low reverse current : I
R
= 5μA (max)
z Small package : SC-59
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse Voltage V
RM
45 V
Reverse voltage V
R
40 V
Maximum (peak) forward current I
FM
300 * mA
Average forward current I
O
100 * mA
Surge current (10ms) I
FSM
1 * A
Power dissipation P 150 * mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55∼125 °C
Operating temperature range T
opr
−40∼100 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics
(Ta
=
25°C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
V
F
(1)
― I
F
= 1mA ― 0.28 ―
V
F
(2)
― I
F
= 10mA ― 0.36 ―
Forward voltage
V
F
(3)
― I
F
= 100mA ― 0.54 0.60
V
Reverse current I
R
― V
R
= 40V ― ― 5
μA
Total capacitance C
T
― V
R
= 0, f = 1MH
z
― 18 25 pF
JEDEC TO-236MOD
EIAJ SC-59
TOSHIBA 1-3G1F
Weight: 0.012g
Unit: mm
