1SS388
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS388
High Speed Switching Application
z Small package
z Low forward voltage: V
F (3)
= 0.54V (typ.)
z Low reverse current: I
R
= 5μA (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse Voltage V
RM
45 V
Reverse voltage V
R
40 V
Maximum (peak) forward current I
FM
300 mA
Average forward current I
O
100 mA
Surge current (10ms) I
FSM
1 A
Power dissipation P * 150 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55~125 °C
Operating temperature range T
opr
−40~100 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Mounted on a glass epoxy circuit board of 20 × 20 mm,
pad dimension of 4 × 4 mm.
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
V
F
(1)
― I
F
= 1mA ― 0.28 ―
V
F
(2)
― I
F
= 10mA ― 0.36 ―
Forward voltage
V
F
(3)
― I
F
= 50mA ― 0.54 0.60
V
Reverse current I
R
― V
R
= 10V ― ― 5
μA
Total capacitance C
T
― V
R
= 0, f = 1MH
z
― 18 25
pF
Equivalent Circuit
(Top View)
Marking
JEDEC ―
JEITA ―
TOSHIBA 1-1G1A
Weight: 1.4mg (typ.)
Unit: mm
