1SS385
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385
High Speed Switching
z Low forward voltage: V
F (2)
= 0.23V (typ.) @I
F
= 5mA
z Small package
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse Voltage V
RM
15 V
Reverse voltage V
R
10 V
Maximum (peak) forward current I
FM
200 * mA
Average forward current I
O
100 * mA
Surge current (10ms) I
FSM
1 * A
Power dissipation P 100 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55∼125 °C
Operating temperature range T
opr
−40∼100 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
V
F
(1)
― I
F
= 1mA ― 0.18 ― V
VF (2) ― IF = 5mA ― 0.23 0.30 V
Forward voltage
V
F
(3)
― I
F
= 100mA ― 0.35 0.50 V
Reverse current I
R
― V
R
= 10V ― ― 20 μA
Total capacitance C
T
― V
R
= 0, f = 1MH
z
― 20 40 pF
Equivalent Circuit
(Top View)
Marking
JEDEC ―
EIAJ ―
TOSHIBA 1-2S1B
Weight: 2.4mg
Unit: mm