1SS385F
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385F
High Speed Switching
z Low forward voltage: V
F
= 0.23V (typ.) @I
F
= 5mA
z Ultra-small package
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse Voltage V
RM
15 V
Reverse voltage V
R
10 V
Maximum (peak) forward current I
FM
200 (*) mA
Average forward current I
O
100 (*) mA
Surge current (10ms) I
FSM
1 (*) A
Power dissipation P 100 (*) mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55~125 °C
Operating temperature range T
opr
−40~100 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol
Test
Circuit
Test Condition Min. Typ. Max. Unit
V
F
(1)
― I
F
= 1mA ― 0.18 ― V
V
F
(2)
― I
F
= 5mA ― 0.23 0.30 V
Forward voltage
V
F
(3)
― I
F
= 100mA ― 0.35 0.50 V
Reverse current I
R
― V
R
= 10V ― ― 20
μA
Total capacitance C
T
― V
R
= 0, f = 1MH
z
― 20 40 pF
Equivalent Circuit
(Top View)
Marking
JEDEC ―
EIAJ ―
TOSHIBA ―
Weight: 2.3 g
Unit: mm
