1SS385FV
2014-03-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385FV
High-Speed Switching Applications
z Low forward voltage: V
F
= 0.23 V (typ.) @I
F
= 5 mA
z Ultra-small package
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage V
RM
15 V
Reverse voltage V
R
10 V
Maximum (peak) forward current I
FM
200 * mA
Average forward current I
O
100 * mA
Surge current (10 ms) I
FSM
1 * A
Power dissipation P 150** mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Operating temperature range T
opr
−40 to 100 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
** : Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
V
F
(1)
― I
F
= 1 mA ― 0.18 ― V
V
F
(2)
― I
F
= 5 mA ― 0.23 0.30 V
Forward voltage
V
F
(3)
― I
F
= 100 mA ― 0.35 0.50 V
Reverse current I
R
― V
R
= 10 V ― ― 20
μA
Total capacitance C
T
― V
R
= 0, f = 1 MHz ― 20 ― pF
Equivalent Circuit
(Top View)
Marking
JEDEC ―
JEITA ―
TOSHIBA 1-1Q1A
Unit: mm
1. ANODE 1
2. ANODE 2
3. CATHODE
VESM
1.2±0.05
0.32±0.05
1
2
3
0.4 0.4
0.22±0.05
0.8±0.05
0.8±0.05
1.2±0.05
0.5±0.05
0.13±0.05
Start of commercial production
2005-02
