1SS382
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS382
Ultra High Speed Switching Application
z Small package
z Composed of 2 independent diodes.
z Low forward voltage : V
F (3)
= 0.92V (typ.)
z Fast reverse recovery time : T
rr
= 1.6ns (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse Voltage V
RM
85 V
Reverse voltage V
R
80 V
Maximum (peak) forward current I
FM
300 * mA
Average forward current I
O
100 * mA
Surge current (10ms) I
FSM
2 A
Power dissipation P 100 * mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
V
F
(1)
― I
F
= 1mA ― 0.61 ― V
V
F
(2)
― I
F
= 10mA ― 0.74 ― V
Forward voltage
V
F
(3)
― I
F
= 100mA ― 0.92 1.20 V
I
R (1)
― V
R
= 30V ― ― 0.1 μA
Reverse current
I
R (2)
― V
R
= 80V ― ― 0.5 μA
Total capacitance CT ― VR = 0, f = 1MHz ― 0.9 2.0 pF
Reverse recovery time trr ― IF = 10mA, Fig.1 ― 1.6 4.0 ns
Pin Assignment
(Top View)
Marking
JEDEC ―
EIAJ ―
TOSHIBA 1-2U1A
Weight: 0.006g
Unit: mm
