1SS381
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS381
VHF Tuner Band Switch Applications
• Small package
• Small total capacitance: C
T
= 1.2 pF (max)
• Low series resistance: r
s
= 0.6 Ω (typ.)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Reverse voltage V
R
30 V
Forward current I
F
100 mA
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Forward voltage V
F
I
F
= 2 mA ⎯ ⎯ 0.85 V
Reverse current I
R
V
R
= 15 V ⎯ ⎯ 0.1 μA
Reverse voltage V
R
I
R
= 1 μA 30 ⎯ ⎯ V
Total capacitance C
T
V
R
= 6 V, f = 1 MHz ⎯ 0.7 1.2 pF
Series resistance r
s
I
F
= 2 mA, f = 100 MHz ⎯ 0.6 0.9 Ω
Marking
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 1-1G1A
Weight: 0.0014 g (typ.)