1SS379
2014-03-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS379
General Purpose Rectifier Applications
z Small package : SC-59
z Low forward voltage : V
F
= 1.0V (typ.)
z Low reverse current : I
R
= 0.1nA (typ.)
z Small total capacitance : C
T
= 3.0pF (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse Voltage V
RM
85 V
Reverse voltage V
R
80 V
Maximum (peak) forward current I
FM
300 * mA
Average forward current I
O
100 * mA
Surge current (10ms) I
FSM
2 * A
Power dissipation P 150 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
*: Unit rating. Total rating = unit rating × 0.7
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA
1-3G1G
Weight: 0.012g (typ.)
Unit: mm
Start of commercial production
1994-01