©
1987
SILICO N SWITCHING DIODE
1SS305
HIGH SPEED SWITCHING
SILICON EPITAXIAL DIODE
DATA SHEET
Document No. D16310EJ2V0DS00 (2nd edition)
(Previous No. DC-2102)
Date Published July 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
• Low capacitance: Ct
= 4.0 pF MAX.
• High speed switching: t
rr
= 3.0 ns MAX.
• Wide applications including switching, limitter, clipper.
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (T
A
= 25°C)
Peak Reverse Voltage V
RM
100 V
DC Reverse Vo ltage V
R
100 V
Peak Forward Current I
FM
300 mA
Average Rectified Current I
O
100 mA
DC Forward Current I
F
100 mA
Maximum Temperatures
Junction Temperature T
j
150 °C
Storage Temperature Range T
stg
–55 to + 150 °C
Thermal Resistance
Junction to Ambient R
th(j-a)
0.85 °C/mW
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTE RISTI CS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
V
F1
I
F
= 10 mA 720 850 mV
V
F2
I
F
= 50 mA 850 1000 mV
Forward Voltage
V
F3
I
F
= 100 mA 950 1200 mV
Reverse Current I
R
V
R
= 100 V 1.0
µ
A
Capacitance C
t
V
R
= 0 V, f = 1. 0 MHz 2.0 4.0 pF
Reverse Recovery T i me t
rr
I
F
= 10 mA, V
R
= 6 V, R
L
= 100 Ω,
See Test Ci rcuit.
3.0 ns
PACKAGE DIMENSIONS (Unit: mm)
2.1±0.1
1.25±0.1
2.0±0.20.9±0.1
3
Marking
2
1
0.3
+0.1
−0
0.15
+0.1
−0.05
0.3
0.65
0 to 0.1
0.3
0.65
+0.1
−0
CONNECTION DIAGRAM (Top View)
2
1
3
1. N.C.
2. Anode
3. Cathode
Marking : A14
