1SS201
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS201
Ultra High Speed Switching Application
z Low forward voltage : V
F
(3)
= 0.9V (typ.)
z Fast reverse recovery time : t
rr
= 1.6ns (typ.)
z Small total capacitance : C
T
= 0.9pF (typ.)
Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage V
RM
85 V
Reverse voltage V
R
80 V
Maximum (peak) forward current I
FM
300 (*) mA
Average forward current I
O
100 (*) mA
Surge current (10ms) I
FSM
2 (*) A
Power dissipation P 200 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Unit rating. Total rating = Unit rating ×1.5.
Electrical Characteristics
(Ta = 25
°
C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
V
F (1)
― I
F
= 1mA ― 0.60 ―
V
F (2)
― I
F
= 10mA ― 0.72 ―
Forward voltage
V
F (3)
― I
F
= 100mA ― 0.90 1.20
V
I
R (1)
― V
R
= 30V ― ― 0.1
Reverse current
I
R (2)
― V
R
= 80V ― ― 0.5
μA
Total capacitance C
T
― V
R
= 0, f = 1MHz ― 0.9 3.0 pF
Reverse recovery time t
rr
― I
F
= 10mA (Fig.1) ― 1.6 4.0 ns
JEDEC ―
EIAJ ―
TOSHIBA 1−4E2A
Weight: 0.13g
Unit: mm
