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1SS200_07

1SS200_07首页预览图
型号: 1SS200_07
PDF文件:
  • 1SS200_07 PDF文件
  • 1SS200_07 PDF在线浏览
功能描述: Ultra High Speed Switching Application
PDF文件大小: 196.08 Kbytes
PDF页数: 共3页
制造商: TOSHIBA[Toshiba Semiconductor]
制造商LOGO: TOSHIBA[Toshiba Semiconductor] LOGO
制造商网址: http://www.semicon.toshiba.co.jp/eng
捡单宝1SS200_07
PDF页面索引
120%
1SS200
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS200
Ultra High Speed Switching Application
z Low forward voltage : V
F
(3)
= 0.92V (typ.)
z Fast reverse recovery time : t
rr
= 1.6ns (typ.)
z Small total capacitance : C
T
= 2.2pF (typ.)
Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage V
RM
85 V
Reverse voltage V
R
80 V
Maximum (peak) forward current I
FM
300 (*) mA
Average forward current I
O
100 (*) mA
Surge current (10ms) I
FSM
2 (*) A
Power dissipation P 200 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Unit Rating. Total Rating = Unit Rating × 1.5.
Electrical Characteristics
(Ta = 25
°
C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
V
F (1)
I
F
= 1mA 0.61
V
F (2)
I
F
= 10mA 0.74
Forward voltage
V
F (3)
I
F
= 100mA 0.92 1.20
V
I
R (1)
V
R
= 30V 0.1
Reverse current
I
R (2)
V
R
= 80V 0.5
μA
Total capacitance C
T
V
R
= 0, f = 1MHz 2.2 4.0 pF
Reverse recovery time t
rr
I
F
= 10mA (Fig.1) 1.6 4.0 ns
JEDEC
EIAJ
TOSHIBA 1-4E2B
Weight: 0.13g
Unit: mm
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