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1SS196_14

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型号: 1SS196_14
PDF文件:
  • 1SS196_14 PDF文件
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功能描述: TOSHIBA Diode Silicon Epitaxial Planar Type
PDF文件大小: 197.16 Kbytes
PDF页数: 共3页
制造商: TOSHIBA[Toshiba Semiconductor]
制造商LOGO: TOSHIBA[Toshiba Semiconductor] LOGO
制造商网址: http://www.semicon.toshiba.co.jp/eng
捡单宝1SS196_14
PDF页面索引
120%
1SS196
2014-03-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS196
Ultra High-Speed Switching Applications
z Small package: SC-59
z Low forward voltage: V
F
(3)
= 0.9 V (typ.)
z Fast reverse recovery time: t
rr
= 1.6 ns (typ.)
z Small total capacitance: C
T
= 0.9 pF (typ.)
Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristics Symbol Rating Unit
Maximum (peak) reverse voltage V
RM
85 V
Reverse voltage V
R
80 V
Maximum (peak) forward current I
FM
300 mA
Average forward current I
O
100 mA
Surge current (10ms) I
FSM
2 A
Power dissipation P 150 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25
°
C)
Characteristics Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
V
F (1)
I
F
= 1 mA 0.60
V
F (2)
I
F
= 10 mA 0.72
Forward voltage
V
F (3)
I
F
= 100 mA 0.90 1.20
V
I
R (1)
V
R
= 30 V 0.1
Reverse current
I
R (2)
V
R
= 80 V 0.5
μA
Total capacitance C
T
V
R
= 0, f = 1 MHz 0.9 3.0 pF
Reverse recovery time t
rr
I
F
= 10 mA (Fig.1) 1.6 4.0 ns
Marking
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 1-3G1A
Weight: 0.012 g (typ.)
Unit: mm
Start of commercial production
1982-05
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