1SS193
2014-08-25
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS193
Ultra High Speed Switching Application
Small package : SC-59
Low forward voltage : V
F
(3)
= 0.9V (typ.)
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
Small total capacitance : C
T
= 0.9pF (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage V
RM
85 V
Reverse voltage V
R
80 V
Maximum (peak) forward current I
FM
300 mA
Average forward current I
O
100 mA
Surge current (10ms) I
FSM
2 A
Power dissipation P 150 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Forward voltage
V
F (1)
I
F
=1mA ― 0.60 ―
V
V
F (2)
I
F
= 10mA ― 0.72 ―
V
F (3)
I
F
= 100mA ― 0.90 1.20
Reverse current
I
R (1)
V
R
= 30V ― ― 0.1
μA
I
R (2)
V
R
= 80V ― ― 0.5
Total capacitance C
T
V
R
= 0, f = 1MH
z
― 0.9 3.0 pF
Reverse recovery time t
rr
I
F
= 10mA (Fig.1) ― 1.6 4.0 ns
Marking
Start of commercial production
1982-05