1SS184
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS184
Ultra High Speed Switching Application
z Small package : SC-59
z Low forward voltage : V
F
(3)
= 0.9V (typ.)
z Fast reverse recovery time : t
rr
= 1.6ns (typ.)
z Small total capacitance :
T
= 2.2pF (typ.)
Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage V
RM
85 V
Reverse voltage V
R
80 V
Maximum (peak) forward current I
FM
300 (*) mA
Average forward current I
O
100 (*) mA
Surge current (10ms) I
FSM
2 (*) A
Power dissipation P 150 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = Unit rating × 1.5.
Electrical Characteristics
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
V
F
(1)
―
I
F
= 1mA
―
0.60
―
V
F
(2)
―
I
F
= 10mA
―
0.72
―
Forward voltage
V
F
(3)
―
I
F
= 100mA
―
0.90 1.20
V
I
R
(1)
―
V
R
= 30V
― ―
0.1
Reverse current
I
R
(2)
―
V
R
= 80V
― ―
0.5
μA
Total capacitance C
T
―
V
R
= 0, f = 1MHz
―
0.9 3.0 pF
Reverse recovery time t
rr
―
I
F
= 10mA (Fig.1)
―
1.6 4.0 ns
Marking
JEDEC TO-236MOD
EIAJ SC-59
TOSHIBA
1-3G1E
Weight: 0.012g
Unit: mm
