Maximum DC Blocking Voltage
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum Average Forward Rectified Current
Typical Junction Capacitance
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
20 30 40 V
14 21 28
V
V
1
25
1
10
110
-55 ~ +150
A
A
V
mA
pF
°C
C
j
T , T
j
stg
Symbols
Units
SCHOTTKY BARRIER RECTIFIERS
FEATURES
• Guarding for overvoltage protection
• Low power loss, high efficiency
• High current capability
• low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
• Metal silicon junction, majority carrier conduction
Maximum Ratings and Electrical characteristics
Ratings at ambient temperature unless otherwise specified.25 °C
20 30 40
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Superimposed On Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Reverse Current at
Rated DC Reverse Voltage TA = 100°C
TA = 25°C
Storage and Operating Junction Temperature Range
1N5817W 1N5818W 1N5819W
0.55
0.875
0.45
0.75
0.6
0.9
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
Top View
Marking Code: 1N5817W---12A
1N5818W---13A
1N5819W---14A
Simplified outline SOD-123FL and symbol
MECHANICAL DATA
• Case: SOD-123FL
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight:15mg 0.00048oz
1N5817W THRU 1N5819W
1
2
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at 1 A
at 3 A
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0
