®
1N 5711
SM ALL SIGNAL SCHO TTKY DIOD E
DESCRIPTION
Metal to silicon junction diode featuring high break-
down, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection
and pulse application with broad dynamic range.
Matched batches are available on request.
August 1999 Ed: 1A
DO 35
(Glass)
Symbol Parameter Value Unit
V
RRM
Repetitive Peak Reverse Voltage 70 V
I
F
Forward Continuous Current*
T
a
= 25
°
C
15 mA
P
tot
Power Dissipation*
T
a
= 25
°
C
430 mW
T
stg
T
j
Storage and Junction Temperature Range - 65 to 200
- 65 to 200
°
C
T
L
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230
°
C
ABSOL UTE RATINGS
(limiting values)
Symbol Test Conditions Value Unit
R
th(j-a)
Junction-ambient* 400
°
C/W
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
** Pulse tes t : t
p
≤
300
µ
s
δ
<
2%
.
Matched batc hes availa bl e on request. Test conditio ns (for ward voltage and/or capacitan ce) accordi ng to cus tomer specification.
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
T
amb
= 25
°
CI
R
= 10
µ
A
70 V
V
F
* *
T
amb
= 25
°
CI
F
= 1mA
0.41 V
T
amb
= 25
°
CI
F
= 15mA
1
I
R
* *
T
amb
= 25
°
CV
R
= 50V
0.2
µ
A
STATI C CHARACTERISTICS
ELECTRI CAL CHARACTE RI STICS
Symbol Test Conditions Min. Typ. Max. Unit
C
T
amb
= 25
°
CV
R
= 0V f = 1MHz
2pF
τ
T
amb
= 25
°
CI
F
= 5mA Krakauer Method
100 ps
DYNAMI C CHA RACTE RISTI CS
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