1HN04CH
No. A0925-1/4
Features
•
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DSS
100 V
Gate-to-Source Voltage V
GSS
±20 V
Drain Current (DC) I
D
120 mA
Drain Current (Pulse) I
DP
PW≤10µs, duty cycle≤1% 480 mA
Allowable Power Dissipation P
D
Mounted on a ceramic board (900mm
2
✕0.8mm) 0.6 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Drain-to-Source Breakdown Voltage V
(BR)DSS
I
D
=1mA, V
GS
=0V 100 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=100V, V
GS
=0V 1 µA
Gate-to-Source Leakage Current I
GSS
V
GS
=±16V, V
DS
=0V ±10 µA
Cutoff Voltage V
GS
(off) V
DS
=10V, I
D
=100µA 1.2 2.6 V
Forward T ransfer Admittance
⏐
yfs
⏐
V
DS
=10V, I
D
=60mA 100 175 mS
Static Drain-to-Source On-State Resistance
R
DS
(on)1 I
D
=60mA, V
GS
=10V 6.1 8.0 Ω
R
DS
(on)2 I
D
=30mA, V
GS
=4V 7 9.8 Ω
Input Capacitance Ciss V
DS
=20V, f=1MHz 19 pF
Output Capacitance Coss V
DS
=20V, f=1MHz 2.6 pF
Reverse T ransfer Capacitance Crss V
DS
=20V, f=1MHz 1.3 pF
Marking : LB Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0925
90507PE TI IM TC-00000810
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
1HN04CH
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
