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195D106X0016X2T

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型号: 195D106X0016X2T
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  • 195D106X0016X2T PDF文件
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功能描述: ULTRALOW-POWER LOW-NOISE 50-mA LOW-DROPOUT LINEAR REGULATORS
PDF文件大小: 315.3 Kbytes
PDF页数: 共17页
制造商: TI[Texas Instruments]
制造商LOGO: TI[Texas Instruments] LOGO
制造商网址: http://www.ti.com
捡单宝195D106X0016X2T
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PDF页面索引
120%
TPS79015, TPS79018, TPS79025, TPS79028, TPS79030
ULTRALOW-POWER LOW-NOISE 50-mA
LOW-DROPOUT LINEAR REGULATORS
SLVS299B – SEPTEMBER 2000 – REVISED MAY 2001
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
50-mA Low-Dropout Regulator
Available in 1.5-V, 1.8-V, 2.5-V, 2.8-V, 3.0-V
Output Noise Typically 56 µV
RMS
(TPS79030)
Only 17 µA Quiescent Current at 50 mA
1 µA Quiescent Current in Standby Mode
Dropout Voltage Typically 57 mV at 50 mA
(TPS79030)
Over Current Limitation
–40°C to 125°C Operating Junction
Temperature Range
5-Pin SOT-23 (DBV) Package
description
The TPS790xx family of low-dropout (LDO)
voltage regulators offers the benefits of
low-dropout voltage, ultralow-power operation,
low-output noise, and miniaturized packaging.
These regulators feature low-dropout voltages
and ultralow quiescent current compared to
conventional LDO regulators. An internal resistor ,
in conjunction with an external bypass capacitor,
creates a low-pass filter to reduce the noise. The
TPS79030 exhibits only 56 µV
RMS
of output
voltage noise using 0.01 µF bypass and 10 µF
output capacitors. Offered in a 5-terminal small
outline integrated-circuit SOT-23 package, the
TPS790xx series devices are ideal for
micropower operations, low output noise, and
where board space is limited.
The usual PNP pass transistor has been replaced
by a PMOS pass element. Because the PMOS
pass element behaves as a low-value resistor, the
dropout voltage is very low, typically 57 mV at
50 mA of load current (TPS79030), and is directly
proportional to the load current. The quiescent
current is ultralow (17 µA typically) and is stable
over the entire range of output load current (0 mA
to 50 mA). Intended for use in portable systems
such as laptops and cellular phones, the
ultralow-dropout voltage feature and ultralow-
power operation result in a significant increase in
system battery operating life.
Copyright 2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
3
2
4
5
DBV PACKAGE
(TOP VIEW)
1
IN
GND
EN
OUT
BYPASS
0
200
400
600
800
1000
1200
100 1k 10k 100k
f – Frequency – Hz
V
I
= 4 V
C
o
= 4.7 µF
C
(byp)
= 0.1 µF
TPS78930
OUTPUT SPECTRAL NOISE DENSITY
vs
FREQUENCY
I
O
= 1 mA
I
O
= 50 mA
V/ HzOutput Spectral Noise Density –
µ
T
J
– Junction Temperature – °C
15
22
TPS79030
GROUND CURRENT
vs
JUNCTION TEMPERATURE
Ground Current – Aµ
V
I
= 4 V
C
o
= 4.7 µF
21
20
19
18
17
16
I
O
= 1 mA
I
O
= 50 mA
–40 5–25 20 35 65 110 12550–10 80
95
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