1.6 GHz SATCOM APPLICAT IONS
RF & MICROWAVE TRANSISTORS
. 23 0 2LFL (M 1 51)
hermetically sealed
.1.65 GHz
.28 VOLTS
.GOLD METALLIZED SYSTEM
.PO LYSILI C ON SI T E BALLASTING
.O VER LAY DIE GEOMETRY
.HI GH RELIABIL ITY AND RUG GEDNESS
.P
OUT
=
5.0 W MIN. WITH 14.0 dB GAIN
DESCRIPT ION
The SD1891-03 is a 28 V silicon NPN transistor
designed for INMARSAT and other 1.6 GHz SAT-
COM applications. This device utilizes polysilicon
site ballasting with a gold metallized die to achieve
high reliability and ruggedness.
PIN CO NNECTION
BRANDING
1891-03
ORDER CODE
SD1891-03
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
°
C)
Symbo l Parameter Value Un i t
V
CBO
Collector-Base Voltage 45 V
V
CEO
Collector-Emitter Voltage 15 V
V
EBO
Emitter-Base Voltage 3.5 V
I
C
Device Current 1.1 A
P
DISS
Power Dissipation 8.8 W
T
J
Junction Temperature +200
°
C
T
STG
Storage Temperature
−
65 to +200
°
C
R
TH(j-c)
Junction-Case Thermal Resistance 20.0 °C/ W
SD1891-03
1. Collector 3. Base
2. Emitter
TH ERMA L DA TA
March 1993
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