1.6 GHz SATCOM APPLICAT IONS
RF & MICROWAVE TRANSISTORS
.250 x .320 2L F L (M170)
epoxy sealed
.1.65 GHz
.28 VOLTS
.EFFICIENCY 50% MIN.
.CLASS C OPERATI ON
.COMMON BASE
.INPUT/OUTPUT MATCHING
.P
OUT
=
24 W MIN. WITH 9.0 dB GAIN
DESCRIPT ION
The SD1888-03 is a 28 V Class C silicon NPN
transistor designed for INMARSAT and other 1.65
GHz SATCOM applications. Agold metallized emit-
ter-ballasted die geometry is employed providing
high gain and efficiency while ensuring long term
reliability and ruggedness under severe operating
conditions. SD1888-03 is packaged in a cost-ef-
fective epoxy sealed housing
PIN CO NNECTION
BRANDING
1888-3
ORDER CODE
SD1888-03
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
°
C)
Symbo l Parameter Value Un i t
V
CBO
Collector-Base Voltage 45 V
V
CEO
Collector-Emitter Voltage 12 V
V
EBO
Emitter-Base Voltage 3.0 V
I
C
Device Current 2.6 A
P
DISS
Power Dissipation 50 W
T
J
Junction Temperature +200
°
C
T
STG
Storage Temperature
−
65 to +150
°
C
R
TH(j-c)
Junction-Case Thermal Resistance 3.5 °C/W
SD1888-03
1. Collector 3. Base
2. Emitter
TH ERMA L DA TA
July 1993
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