January 2007 Rev 2 1/12
12
STS17NH3LL
N-channel 30V - 0.004Ω - 17A - SO-8
STripFET™ Power MOSFET for DC-DC conversion
General features
■ Optimal R
DS(on)
x Qg trade-off @ 4.5 V
■ Conduction losses reduced
■ Improved junction-case thermal resistance
■ Low threshold device
Description
This device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This process coupled to unique metallization
techniques realizes the most advanced low
voltage Power MOSFET in SO-8 ever produced.
Applications
■ Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STS17NH3LL 30V <0.0057Ω 17A
(1)
1. This value is rated according to Rthj-pcb
SO-8
www.st.com
Order codes
Part number Marking Package Packaging
STS17NH3LL 17H3LL- SO-8 Tape & reel
