16DL2CZ47A,16FL2CZ47A
2001-07-13
1
Unit: mm
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
16DL2CZ47A,16FL2CZ47A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
l Repetitive Peak Reverse Voltage : V
RRM
= 200, 300V
l Average Output Rectified Current : I
O
= 16A
l Ultra Fast Reverse−Recovery Time : t
rr
= 35ns (Max)
l Low Switching Losses and Output Noise.
MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
16DL2CZ47A 200
Repetitive Peak
Reverse Voltage
16FL2CZ47A
V
RRM
100
V
Average Output Rectified Current
(Full Sine Waveform)
I
O
16 A
80 (50Hz)
Peak One Cycle Surge Forward
Current (Non−Repetitive)
I
FSM
88 (60Hz)
A
Junction Temperature T
j
−40~150 °C
Storage Temperature Range T
stg
−40~150 °C
Screw Torque ― 0.6 N·m
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT
16DL2CZ47A ― ― 0.98
Peak Forward
Voltage (Note 1)
16FL2CZ47A
V
FM
I
FM
= 8A
― ― 1.3
V
Repetitive Peak ReverseCurrent
(Note 1)
I
RRM
V
RRM
= Rated ― ― 50 µA
Reverse Recovery Time (Note 1) t
rr
I
F
= 2.0A, di / dt = −50A / µs ― ― 35 ns
Forward Recovery Time (Note 1) t
fr
I
F
= 1.0A ― ― 100 ns
Thermal Resistance R
th (j−c)
DC Total, Junction to Case ― ― 3.3 °C / W
Note 1: A value of one cell.
POLARITY MARKING
16DL2CZ 16DL2CZ47A
* 1 MARK
16FL2CZ
TYPE
16FL2CZ47A
* 2 A
* 3
JEDEC ―
JEITA ―
TOSHIBA 12−10C1A
Weight: 2.0g
