16FL2C41A
2006-11-08
1
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
16FL2C41A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
z Repetitive Peak Reverse Voltage : V
RRM
= 300 V
z Average Output Rectified Current : I
O
= 16 A
z Ultra Fast Reverse−Recovery Time : t
rr
= 35ns (Max)
z Low Switching Loss and Output Noise
ABSOLUTE MAXIMUM RATINGS
(Ta
=
25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage V
RRM
300 V
Average Output Rectified Current
(Full Sine Waveform)
I
O
16 A
80 (50H
z
)
Peak One Cycle Surge Forward
Current (Non−Repetitive)
I
FSM
88 (60H
z
)
A
Junction Temperature T
j
−40~150 °C
Strage Temperature Range T
stg
−40~150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
POLARITY
MARKING
Abbreviation Code Part No.
16FL2C 16FL2C41A
Unit: mm
JEDEC ⎯
JEITA ⎯
TOSHIBA 12−16D1A
Weight: 4.85 g (typ.)
16FL2C
Lot No.
Characteristics
indicator
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)