AVIONI CS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 SQ . 2LFL (M1 05)
hermetically sealed
.DESIGNED FOR HIGH POWER PU LSED
IFF, DME, TACAN APPLICATIONS
.2 0 WATTS ( t y p. ) IF F 1030 - 1090 M Hz
.1 5 WATTS ( mi n.) DME 1025 - 1150 MHz
.1 5 WATTS (typ. ) TACAN 960 - 1215 M H z
.10 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.EMIT T ER BALLASTIN G AND LOW
THERMAL RESISTANCE
.2 0:1 LOAD VSW R C APABILI TY AT
SPECIF IED OPERATIN G CON D ITION S
.IN PUT M ATCH ED , COM MON BASE
CONFIGURATION
DESCRI PT ION
The SD1528-08 is a gold metallized, silicon NPN
power transistor. The SD1528-08 is designed for
applications requiring high peak power and low
duty cycles such as IFF, DME and TACAN. The
SD1528-08 is packaged in the .250” input matched
hermetic stripline flange package resulting in im-
proved broadband performance and a low thermal
resistance.
PIN CO NNECTION
BRANDING
1528-8
ORDER CODE
SD1528-08
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
°
C)
Symb o l Parameter Value Un i t
V
CBO
Collector-Base Voltage 65 V
V
CEO
Collector-Emitter Voltage 65 V
V
EBO
Emitter-Base Voltage 3.5 V
I
C
Device Current 1.5 A
P
DISS
Power Dissipation 87.5 W
T
J
Junction Temperature +200
°
C
T
STG
Storage Temperature
−
65 to +150
°
C
R
TH(j-c)
Junction-Case Thermal Resistance 2.0 °C/ W
SD1528-08
1. Collector 3. Emitter
2. Base
TH ERMA L DATA
November 1992
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