May 2011 Doc ID 018870 Rev 1 1/14
14
STL13NM60N
N-channel 600 V, 0.320 Ω, 10 A PowerFLAT™ (8x8) HV
MDmesh™ II Power MOSFET
Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
This device is a N-channel Power MOSFETs
made using the second generation of MDmesh™
technology. This revolutionary transistor
associates a new vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Figure 1. Internal schematic diagram
Order code
V
DSS
@
T
Jmax
R
DS(on)
max
I
D
STL13NM60N 650 V < 0.385 Ω 10 A
(1)
1. The value is rated according to R
thj-case
3
3
3
'
$
0OWER&,!4X(6
"OTTOMVIEW
!-V
$
'
3
Table 1. Device summary
Order code Marking Package Packaging
STL13NM60N 13NM60N PowerFLAT™ (8x8) HV Tape and reel
www.st.com
