12A02MH
No.7483-1/6
Applications
•
Low-frequency Amplifi er, high-speed switching, small motor drive, muting circuit
Features
•
Large current capacity
•
Low collector-to-emitter saturation voltage (resistance) R
CE
(sat) typ.=285m
Ω
[I
C
=1A, I
B
=50mA]
•
Small ON-resistance (Ron)
Specifi cations
Absolute Maximum Ratings
at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
--15 V
Collector-to-Emitter Voltage V
CEO
--12 V
Emitter-to-Base Voltage V
EBO
-- 5 V
Collector Current I
C
-- 1 A
Collector Current (Pulse) I
CP
-- 2 A
Collector Dissipation P
C
When mounted on ceramic substrate (600mm
2
×
0.8mm)
600 mW
Junction Temperature Tj 150
°
C
Storage Temperature Tstg --55 to +150
°
C
Package Dimensions
unit : mm (typ)
7019A-004
Ordering number : EN7483A
90512 TKIM/O2203 TSIM TA-100608
SANYO Semiconductors
DATA SHEET
12A02MH
PNP Epitaxial Planar Silicon Transistor
Low-Frequency General-Purpose
Amplifi er Applications
http://www.sanyosemi.com/en/network/
Product & Package Information
• Package : MCPH3
• JEITA, JEDEC : SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
Electrical Connection
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
0.250.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
12
3
0 to 0.02
TL
12A02MH-TL-E
AK
LOT No.
LOT No.
3
2
1
