5 GHz to 11 GHz
GaAs, pHEMT, MMIC, Low Noise Amplifier
Data Sheet
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2018 Analog Devices, Inc. All rights reserved.
Technical Support www.analog.com
FEATURES
Low noise figure: 1.8 dB typical
High gain: 19.5 dB
High P1dB output power: 16 dBm typical
Single supply: 3.5 V at 80 mA
Output IP3: 28 dBm
50 Ω matched input/output
Self biased with optional bias control for quiescent drain
control (I
DQ
) reduction.
3 mm × 3 mm, 16-lead LFCSP: 9 mm²
APPLICATIONS
Point to point radios
Point to multi point radios
Military and space
Test instrumentation
FUNCTIONAL BLOCK DIAGRAM
NIC
NIC
RF
IN
GND
NIC
NIC
V
DD
2
V
DD
1
NIC
NIC
RF
OUT
GND
GND
NIC
V
GG
1
V
GG
2
NIC
HMC902LP3E
PACKAGE
BASE
16
15
14
13
12
11
10
9
1
3
4
2
6
5
7
8
14524-001
Figure 1.
GENERAL DESCRIPTION
The HMC902LP3E is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transistor (pHEMT), monolithic microwave
integrated circuit (MMIC) low noise amplifier (LNA), which is
self biased with optional bias control for IDQ reduction. The
HMC902LP3E is housed in a leadless 3 mm × 3 mm plastic surface
mount package. The amplifier operates between 5 GHz and
11 GHz, providing 19.5 dB of small signal gain, 1.8 dB noise figure,
and 28 dBm of output IP3, while requiring only 80 mA from a
3.5 V supply.
The P1dB output power of 16 dBm enables the LNA to function
as a local oscillator (LO) driver for balanced, I/Q, or image reject
mixers. The HMC902LP3E also features inputs/outputs that are
dc blocked and internally matched to 50 Ω, making it ideal for
high capacity microwave radios and C band, very small aperture
terminal (VSAT) applications.