1 GHz to 11 GHz, GaAs, HEMT,
MMIC Low Noise Amplifier
Data Sheet
HMC753
Rev. D Document Feedback
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FEATURES
Noise figure: 1.5 dB at 4 GHz (see Figure 10)
Gain
16.5 dB at 1 GHz to 6 GHz
14 dB at 6 GHz to 11 GHz
Output power for 1 dB compression (P1dB): 18 dBm
at 1 GHz to 6 GHz
Supply voltage (V
DD
): 5 V at 55 mA
Output third-order intercept (IP3): 30 dBm at 1 GHz to 6 GHz
50 Ω matched input/output (I/O)
24-lead lead frame chip scale package (LFCSP): 16 mm
2
APPLICATIONS
Point to point radios
Point to multipoint radios
Military and space
Test instrumentation
FUNCTIONAL BLOCK DIAGRAM
13
1
3
4
2
7
GND
GND
RFIN
GND
5
6
GND
GND
GND
14
GND
15
GND
16
RFOUT
17
GND
18
GND
GND
8
GG
2
9
GG
1
10
V
DD
1
1
NC
12
19
GND
GND
20
NC
21
NC
22
NC
23
NC
24
GND
HMC753
13494-001
Figure 1.
GENERAL DESCRIPTION
The HMC753 is a gallium arsenide (GaAs), monolithic
microwave integrated circuit (MMIC), low noise, wideband
amplifier housed in a leadless, 4 mm × 4 mm LFCSP. The amplifier
operates between 1 GHz and 11 GHz, providing up to 16.5 dB
of small signal gain at 1 GHz to 6 GHz, a 1.5 dB noise figure at
4 GHz (see Figure 10), and an output IP3 of 30 dBm at 1 GHz to
6 GHz, while requiring only 55 mA from a 5 V supply.
The P1dB output power of up to 18 dBm at 1 GHz to 6 GHz
enables the low noise amplifier (LNA) to function as a local
oscillator (LO) driver for balanced, I/Q, or image rejection
mixers. The HMC753 also features I/Os that are dc blocked and
internally matched to 50 Ω, making the device ideal for high
capacity microwave radios or very small aperture terminal (VSAT)
applications.
