HF SSB APPLICATIONS
RF & MICROWAVE TRANSISTORS
.380 4LFL (M113)
epoxy sealed
.30 MHz
.28 VOLTS
.IMD −28 dB
.COMMON EMITTER
.GOLD METALLIZATION
.P
OUT
=
30 W MIN. WITH 18 dB GAIN
DESCRIPTION
The SD1224-10 is a 28 V epitaxial silicon NPN
planar transistor designed primarily for SSB com-
muni cations. This device uti lizes emitter ballasting
for improved ruggedness and reliability.
PIN CONNECTION
BRANDING
1 224-10
OR DER COD E
SD1224-10
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
°
C)
Symb ol Parameter Value Unit
V
CBO
Collector-Base Voltage 65 V
V
CEO
Collector-Emitter Voltage 36 V
V
EBO
Emitter-Base Voltage 4.0 V
I
C
Device Current 4. 5 A
P
DI S S
Power Dissipation 80 W
T
J
Junction Temperature +200
°
C
T
STG
Storage Temperature
−
65 to +150
°
C
R
TH(j-c)
Junction-Case Thermal Resistance 2. 2 °C/W
SD1224-10
1. Collector 3. Base
2. Emitter 4. Emitter
THERMAL DATA
October 1992
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