Rev. 2.4 Page 1 2005-08-24
SPP11N80C3
SPA11N80C3
Cool MOS™ Power Transistor
V
DS
800 V
R
DS
on
0.45 Ω
I
D
11 A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
PG-TO220-3-31 PG-TO220
P-TO220-3-31
1
2
3
Marking
11N80C3
11N80C3
Type Package Ordering Code
SPP11N80C3 PG-TO220 Q67040-S4438
SPA11N80C3 PG-TO220-3-31 SP000216320
Maximum Ratings
Parameter
Symbol Value Unit
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
11
7.1
11
1)
7.1
1)
A
Pulsed drain current, t
limited by T
max
I
D
uls
33 33 A
Avalanche energy, single pulse
I
D
=2.2A, V
DD
=50V
E
AS
470 470 mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
2)
I
D
=11A, V
DD
=50V
E
AR
0.2 0.2
Avalanche current, repetitive t
R
limited by T
max
I
R
11 11 A
Gate source voltage V
GS
±20 ±20 V
Gate source voltage AC (f >1Hz)
V
GS
±30 ±30
Power dissipation,
T
C
= 25°C
P
tot
156 41 W
SPP
Operating and storage temperature
T
,
T
st
-55...+150 °C