VHF PORTABLE/MOBILE APPLICATIONS
RF & MICROWAVE TRANSISTORS
.280 4LSL (M123)
epoxy sealed
.150 MHz
.7.5 VOLTS
.COMMON EMITTER
.P
OUT
=
2.5 W MIN. WITH 11.0 dB GAIN
DESCRIPTION
Th e SD1135-03 is a 7.5 V Class C epit axial silico n
NPN planar transistor designed primarily for VHF
communications. It withstands severe mismatch
under operating conditions.
PIN CONNECTION
BRANDING
1 135-3
OR DER COD E
SD1135-03
ABSOLUTE MAXIMUM RATINGS (T
case
= 25
°
C)
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage 36 V
V
CER
Collector-Emitter Voltage 16 V
V
CES
Collector-Emitter Voltage 36 V
V
EBO
Emitter-Base Voltage 4.0 V
I
C
Device Current 1. 7 A
P
DI S S
Power Dissipation 15 W
T
J
Junction Temperature +200
°
C
T
STG
Storage Temperature
−
65 to +150
°
C
R
TH(j-c)
Junction-Case Thermal Resistance 11 .6 °C/W
SD1135-03
1. Collector 3. Base
2. Emitter 4. Emitter
THERMAL DATA
October 1992
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