10DL2CZ47A,10FL2CZ47A,10GL2CZ47A
2006-11-08
1
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
10DL2CZ47A, 10FL2CZ47A, 10GL2CZ47A
SWITCHING MODE POWER SUPPLY APPLICATIONS
CONVERTER & CHOPPER APPLICATION
• Repetitive Peak Reverse Voltage : V
RRM
= 200 V, 300 V, 400 V
• Average Output Rectified Current : I
O
= 10 A
• Ultra Fast Reverse-Recovery Time : t
rr
= 35 ns (Max)
• Low Switching Losses and Output Noise
MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
10DL2CZ47A 200
10FL2CZ47A 300
Repetitive Peak
Reverse Voltage
10GL2CZ47A
V
RRM
400
V
Average Output Rectified Current I
O
10 A
50 (50H
z
)
Peak One Cycle Surge Forward
Current (Sine Wave)
I
FSM
55 (60H
z
)
A
Junction Temperature T
j
−40~150 °C
Storage Temperature Range T
stg
−40~150 °C
Screw Torque ―
0.6
N·m
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
10DL2CZ47A
―
―
0.98
10FL2CZ47A
―
―
1.3
Peak Forward
Voltage (Note 1)
10GL2CZ47A
V
FM
I
FM
=5A
―
―
1.8
V
10DL2CZ47A
―
―
10
10FL2CZ47A
―
―
10
Repetitive Peak
Reverse Current
(Note 1)
10GL2CZ47A
I
RRM
V
RRM
=Rated
―
―
50
μA
Reverse Recovery Time (Note 1) t
rr
I
F
=2A, di / dt=−20A / μs
―
― ―
ns
Forward Recovery Time (Note 1) t
fr
I
F
=1A
―
― ―
ns
Thermal Resistance R
th (j-c)
Total DC, Junction to Case
―
― ―
°C / W
Note 1 : A value applied to one cell.
JEDEC ―
JEITA ―
TOSHIBA 12-10C1A
Weight : 2.0g
Unit in mm
