PSMN5R6-100PS
N-channel 100 V 5.6 mΩ standard level MOSFET
Rev. 01 — 23 November 2009 Product data sheet
1. Product profile
1.1 General description
S t andard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This pr oduct
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC convertors
Load switching
Motor contro l
Server power supplies
1.4 Quick reference data
[1] Continious current limited by package.
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 100 V
I
D
drain current T
mb
=25°C; V
GS
=10V;
see Figure 1
[1]
- - 100 A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 - - 306 W
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=10V; I
D
=25A;
T
j
= 25 °C; see Figure 11
and 12
-4.35.6mΩ
