Data Sheet 1 2004-04-05
PTF080901E
Package 30248
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
36 38 40 42 44 46 48 50
Output Power (dBm)
Modulation Spectrum (dB)
10
15
20
25
30
35
40
45
50
55
Drain Efficiency (%)
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 700 mA, f = 959.8 MHz
PTF080901
LDMOS RF Power Field Effect Transistor
90 W, 869–960 MHz
Features
• Broadband internal matching
• Typical EDGE performance
- Average output power = 45 W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW performance
- Output power at P–1dB = 120 W
- Gain = 17 dB
- Efficiency = 60%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
90 W (CW) output power
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
RF Characteristics at T
CASE
= 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 700 mA, P
OUT
= 45 W, f = 959.8 MHz
Characteristic Symbol Min Typ Max Unit
Error Vector Magnitude EVM (RMS) — 2.5 — %
Modulation Spectrum @ 400 kHz ACPR — –62 — dBc
Modulation Spectrum @ 600 kHz ACPR — –74 — dBc
Gain G
ps
— 18 — dB
Drain Efficiency η
D
— 40 — %
Two–Tone Measurements (tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 650 mA, P
OUT
= 90 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain G
ps
17 18 — dB
Drain Efficiency η
D
40 42 — %
Intermodulation Distortion IMD — –32 –29 dBc
PTF080901F
Package 31248
