2009-11-27Rev. 3.2
Page 1
SPP07N60C3
SPI07N60C3, SPA07N60C3
Cool MOS™ Power Transistor
V
DS
@ T
jmax
650 V
R
DS(on)
0.6 Ω
I
D
7.3 A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
PG-TO220PG-TO220FP PG-TO262
2
P-TO220-3-1
2
3
1
P-TO220-3-31
1
2
3
Marking
07N60C3
07N60C3
07N60C3
Type Package
Ordering Code
SPP07N60C3
PG-TO220
-3
Q67040-S4400
SPI07N60C3
PG-TO262
Q67040-S4424
SPA07N60C3 PG-TO220FP
SP000216303
Maximum Ratings
Parameter
Symbol
Value
Unit
SPP_I
SPA
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
7.3
4.6
7.3
1)
4.6
1)
A
Pulsed drain current,
t
p
limited by
T
j
max
I
D
p
uls
21.9
21.9
A
Avalanche energy, single pulse
I
D
=5.5A,
V
DD
=50V
E
AS
230
230
mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
2)
I
D
=7.3A,
V
DD
=50V
E
AR
0.5
0.5
Avalanche current, repetitive
t
AR
limited by
T
j
max
I
AR
7.3
7.3
A
Gate source voltage static
V
GS
±20
±20
V
Gate source voltage AC (f >1Hz)
V
GS
±30
±
30
Power dissipation,
T
C
= 25°C
P
tot
83
32
W
Operating and storage temperature
T
j
,
T
st
g
-55...+150 °C
Reverse diode dv/dt dv/dt 15 V/ns
6)