2008-04-11
Rev. 2.4 Page 1
SPD06N80C3
Cool MOS™ Power Transistor
V
DS
800 V
R
DS
on
0.9 Ω
I
D
6 A
Feature
• New revolutionary high voltage technology
• Worldwide best R
DS
on
in TO252
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
PG-TO252
Type Package Ordering Code
SPD06N80C3 PG-TO252 Q67040-S4352
Marking
06N80C3
Maximum Ratings, at T
C
= 25°C, unless otherwise specified
Parameter
Symbol Value Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
6
3.8
A
Pulsed drain current, t
limited by T
max
I
D
uls
18
Avalanche energy, single pulse
I
D
=1.2A, V
DD
=50V
E
AS
230 mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
1)
I
D
=6A, V
DD
=50V
E
AR
0.2
Avalanche current, repetitive t
R
limited by T
max
I
R
6 A
Gate source voltage V
GS
±20
V
Power dissipation, T
C
= 25°C
P
tot
83 W
Operating and storage temperature T
, T
st
-55... +150
°C