IPI04N03LA, IPP04N03LA
OptiMOS
®
2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC
1)
for target applications
• N-channel - Logic level
• Excellent gate charge x R
DS(on)
product (FOM)
• Very low on-resistance R
DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C
2)
80 A
T
C
=100 °C
80
Pulsed drain current
I
D,pulse
T
C
=25 °C
3)
385
Avalanche energy, single pulse
E
AS
I
D
=77 A, R
GS
=25 :
290 mJ
Reverse diode dv /dt dv /dt
I
D
=80 A, V
DS
=20 V,
di /dt =200 A/μs,
T
j,max
=175 °C
6 kV/μs
Gate source voltage
4)
V
GS
±20 V
Power dissipation
P
tot
T
C
=25 °C
107 W
Operating and storage temperature
T
j
, T
stg
-55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
1)
J-STD20 and JESD22
Value
V
DS
25 V
R
DS(on),max
4.2
m:
I
D
80 A
Product Summary
PG-TO220-3PG-TO262-3
Type Package Marking
IPI04N03LA PG-TO262-3 04N03LA
IPP04N03LA PG-TO220-3 04N03LA
Rev. 1.9 page 1 2007-08-29
