SEMiX603GB12E4Ip
© by SEMIKRON Rev. 4.0 – 27.05.2015 1
SEMiX
®
3p shunt
GB + shunt
Trench IGBT Modules
SEMiX603GB12E4Ip
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• Press-fit pins as auxiliary contacts
• Thermally optimized ceramic
• Current sensing shunt resistor
• UL recognized, file no. E63532
Typical Applications*
•AC inverter drives
•UPS
• Renewable energy systems
Remarks
• Product reliability results are valid for
T
j
=150°C
•V
isol
between temperature sensor and
power section is only 2500V
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
V
CES
T
j
=25°C
1200 V
I
C
T
j
= 175 °C
T
c
=25°C
1110 A
T
c
=80°C
853 A
I
Cnom
600 A
I
CRM
I
CRM
= 3xI
Cnom
1800 A
V
GES
-20 ... 20 V
t
psc
V
CC
= 800 V
V
GE
≤ 20 V
V
CES
≤ 1200 V
T
j
=150°C
10 µs
T
j
-40 ... 175 °C
Inverse diode
V
RRM
T
j
=25°C
1200 V
I
F
T
j
= 175 °C
T
c
=25°C
856 A
T
c
=80°C
640 A
I
Fnom
600 A
I
FRM
I
FRM
= 3xI
Fnom
1800 A
I
FSM
t
p
= 10 ms, sin 180°, T
j
=25°C
3456 A
T
j
-40 ... 175 °C
Module
I
t(RMS)
407 A
T
stg
-40 ... 125 °C
V
isol
AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
V
CE(sat)
I
C
=600A
V
GE
=15V
chiplevel
T
j
=25°C
1.80 2.05 V
T
j
=150°C
2.03 2.30 V
V
CE0
chiplevel
T
j
=25°C
0.87 1.01 V
T
j
=150°C
0.77 0.9 V
r
CE
V
GE
=15V
chiplevel
T
j
=25°C
1.6 1.7 mΩ
T
j
=150°C
2.1 2.3 mΩ
V
GE(th)
V
GE
=V
CE
, I
C
= 22.2 mA 5.3 5.8 6.3 V
I
CES
V
GE
=0V
V
CE
= 1200 V
T
j
=25°C
5mA
T
j
=150°C
mA
C
ies
V
CE
=25V
V
GE
=0V
f=1MHz
37.5 nF
C
oes
f=1MHz
2.31 nF
C
res
f=1MHz
2.04 nF
Q
G
V
GE
= - 8 V...+ 15 V
3450 nC
R
Gint
T
j
=25°C
1.17 Ω
t
d(on)
V
CC
= 600 V
I
C
=600A
V
GE
= +15/-15 V
R
G on
=1.5Ω
R
G off
=1.5Ω
di/dt
on
= 6800 A/µs
di/dt
off
=3700A/µs
du/dt = 3400 V/µs
L
s
=21nH
T
j
=150°C
260 ns
t
r
T
j
=150°C
85 ns
E
on
T
j
=150°C
63 mJ
t
d(off)
T
j
=150°C
560 ns
t
f
T
j
=150°C
145 ns
E
off
T
j
=150°C
80 mJ
R
th(j-c)
per IGBT 0.037 K/W
R
th(c-s)
per IGBT (λ
grease
=0.81 W/(m*K))
0.035 K/W
R
th(c-s)
per IGBT, pre-applied phase change
material
0.025 K/W
