015AZ2.0~015AZ24
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
015AZ2.0~015AZ24
Constant-Voltage Regulation Applications
z Small package
z Nominal voltage tolerance of about ±2.5%
(2.0 V~24 V)
Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic Symbol Rating Unit
Power dissipation P* 150 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
* Mounted on a glass-epoxy circuit board of 20 × 20 mm,
Pad dimensions of 4 × 4 mm.
Electrical Characteristics
(See pages 2~3.)
Marking
Example 1: 015AZ2.4-X Example 2: 015AZ2.4-Z Example 3: 015AZ12-X
Pin Assignment
(Top View)
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 1-1G1A
Weight: 1.4 mg (typ.)
24
ec
ma
po
nt
o
tage ran
z : VZ =
VZ rankin
volta
e
X 0.1
nil: VZ = VZ rankin
24
24
12
VZ additional ranking
upper --- X rank , middle --- Y rank , lower --- Z rank
